Overview
Description
Renesas TOLG technology features ultra-compact, gullwing lead designs that are compatible with the TOLL footprint, offering enhanced thermal performance and management, as well as improved thermal cycling on-board performance. Renesas' new split gate technology is suitable for applications requiring low RDS(on) and switching capabilities, making it ideal for high power and high-frequency applications.
Features
- Standard level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 1.5mΩ Max.
- Low input capacitance
- Low thermal resistance
- AEC-Q101 qualified
- PPAP capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Comparison
Applications
- Automotive: small traction (2-wheel, 3-wheel vehicle), 48V load, OBC, charging station, LDC, etc.
- Industrial/Infrastructure: energy infrastructure, micro inverter, power-tool, DC-DC, etc.
Documentation
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Type | Title | Date |
Datasheet | PDF 367 KB | |
Guide | PDF 2.76 MB | |
Guide | PDF 796 KB | |
Application Note | PDF 722 KB | |
Application Note | PDF 5.44 MB | |
Application Note | PDF 3.23 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Videos & Training
Renesas 100V MOSFETs with Split Gate Technology deliver industry-leading on-resistance performance while helping to reduce overall system costs.
To learn more, visit the pages for RBA300N10EANS-3UA02 and RBA300N10EHPF-5UA02.
News & Blog Posts
Renesas Introduces New MOSFETs with Exceptional Performance | News | Jan 9, 2025 |