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Overview

Description

Renesas TOLG technology features ultra-compact, gullwing lead designs that are compatible with the TOLL footprint, offering enhanced thermal performance and management, as well as improved thermal cycling on-board performance. Renesas' new split gate technology is suitable for applications requiring low RDS(on) and switching capabilities, making it ideal for high power and high-frequency applications.

Features

  • Standard level gate drive voltage: VGS(th) = 2.0V to 4.0V
  • Super low on-state resistance: RDS(on) = 1.5mΩ Max.
  • Low input capacitance
  • Low thermal resistance
  • AEC-Q101 qualified
  • PPAP capable
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Comparison

Applications

  • Automotive: small traction (2-wheel, 3-wheel vehicle), 48V load, OBC, charging station, LDC, etc.
  • Industrial/Infrastructure: energy infrastructure, micro inverter, power-tool, DC-DC, etc.

Documentation

Type Title Date
Datasheet PDF 367 KB
Guide PDF 2.76 MB
Guide PDF 796 KB
Application Note PDF 722 KB
Application Note PDF 5.44 MB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
7 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models

Videos & Training

100V MOSFETs in TOLL/TOLG for High Current Switching Applications

Renesas 100V MOSFETs with Split Gate Technology deliver industry-leading on-resistance performance while helping to reduce overall system costs.

To learn more, visit the pages for RBA300N10EANS-3UA02 and RBA300N10EHPF-5UA02.