概要
説明
The RJP1CS23DWA 1250V, 30A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.
特長
- Renesas generation 7th Trench IGBT
- Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 30A, VGE = 15V, Tc = 25 °C)
- Moderate speed switching
- Short circuit withstands time (10μs min.)
製品比較
アプリケーション
- Inverters
設計・開発
モデル
ECADモデル
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Processing table
| Wafer |
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