概要
説明
The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.
特長
- Electrically screened to DSCC SMD # 5962-01509
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- High Dose Rate: 300krad(SI) (Max)
- Low Dose Rate: 50krad(SI) (Max)
- SEL immune: Dielectrically isolated
- SEU immune: 35MeV/mg/cm2
- SEU cross-section at 89MeV/mg/cm2: 5x10-6cm2
- Low start-up current: 100µA (Typ)
- Fast propagation delay: 80ns (Typ)
- Supply voltage range: 12V to 20V
- High output drive: 1A (Peak, Typ)
- Undervoltage lockout: 8.8V start (Typ), 8.2V stop (Typ)
製品比較
アプリケーション
- Current-mode switching power supplies
- Control of high current FET drivers
- Motor speed and direction control
設計・開発
モデル
ECADモデル
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Processing table
| 100 | 5962F0150902V9A | ||||
| SBDIP | Tray | 25 | 5962F0150902VPC | ||
| CFP | Tray | 25 | 5962F0150902VXC | ||
| DIE | 5 | ||||
| DIE | 100 | 5962F0150902V9A |
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