概要
説明
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
特長
- Fast access times 7.5ns up to 117MHz clock frequency
- LBO input selects interleaved or linear burst mode
- Self-timed write cycle with global write control (GW), byte write
- enable (BWE), and byte writes (BWx)
- 3.3V core power supply
- Power down controlled by ZZ input
- 3.3V I/O supply (VDDQ)
- Available in 100-pin TQFP, 119-pin BGA and 165 fpBGA packages
製品比較
アプリケーション
設計・開発
モデル
ECADモデル
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Processing table
Pkg. Type |
Lead Count (#) |
Temp. Grade |
Pb (Lead) Free |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Price (USD) | 1ku |
ご購入 / サンプル |
|
|---|---|---|---|---|---|---|---|---|
| 型名 | ||||||||
| CABGA | 165 | C | No | Tray | 3 | 22.21 | サンプルを入手, | |
| CABGA | 165 | I | Yes | Reel | 3 | |||
| TQFP | 100 | I | Yes | Tray | 3 | 25.32 | サンプルを入手, | |
| TQFP | 100 | I | Yes | Tray | 3 | 25.32 | サンプルを入手, | |
| CABGA | 165 | I | No | Tray | 3 | 24.46 | サンプルを入手, | |
| CABGA | 165 | I | No | Reel | 3 | |||
| TQFP | 100 | C | Yes | Tray | 3 | 14.72 | サンプルを入手, | |
| TQFP | 100 | I | Yes | Tray | 3 | 25.32 | サンプルを入手, |
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