F1423

概要

The F1423 RF amplifier provides 13.1dB gain with +41.8dBm OIP3 and 5.1dB noise figure at 2000MHz. This device uses a single 5V supply and 120mA of I_CC. The F1423 is packaged in a 4mm x 4mm, 24-VFQFPN package with 50Ω differential RF input and 50Ω single-ended RF output impedances for ease of integration into the signal path.

Broadband 600MHz to 3000MHz
13.1dB typical gain at 2000MHz
5.1dBNF at 2000MHz
+41.8dBm OIP3 at 2000MHz
+21.5dBm output P1dB at 2000MHz
Single 5V supply voltage
I_CC = 120mA
Up to +105 °C T_CASE operating temperature
50Ω differential input impedance
50Ω single-ended output impedance
Positive gain slope for board loss compensation
Standby mode for power savings

Multi-mode, Multi-carrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
Public Safety Infrastructure

ドキュメント


分類	タイトル	日時
データシート	F1423 Datasheet RevO PDF 4.64 MB	2015年11月13日
製品変更通知	PCN# : 240008 Add alternate assembly locations on select VFQFPN packages PDF 674 KB	2024年5月28日
ガイド	RF Product Selection Guide PDF 2.24 MB	2023年9月27日
製品変更通知	PCN# : 220019 Add Alternate Assembly Locations on VFQFPN and FCLGA Packages PDF 771 KB	2022年7月22日
製品概要	RF Amplifiers with Zero-Distortion Technology PDF 983 KB	2022年4月8日
製品変更通知	PCN# : Q1703-02 Die size change, F1423NBGI(8) PDF 45 KB	2017年5月2日
6件

設計・開発

F1423EVB

Evaluation

詳しくはこちら

Evaluation Board for F1423 Differential Input, Single-ended Output Amplifier

The F1423EVB is a fully-populated evaluation board which allows the customer to easily evaluate the F1423 differential input amplifier. There are four options available...

主要ドキュメント:

F1423 Datasheet RevO

ECADモデル

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Processing table

	Pkg. Type	Lead Count (#)	Temp. Grade	Pb (Lead) Free	Carrier Type	Moisture Sensitivity Level (MSL)	Price (USD) \| 1ku	ご購入 / サンプル
(2) アクティブ (0) Obsolete / NRND / LTB	VFQFPN	最大値最小値	I	Yes	Reel Tray	1	最大値参考価格は、1,000個を基準としています。また、予告なく変更される場合があります。最小値参考価格は、1,000個を基準としています。また、予告なく変更される場合があります。	サンプルを入手購入/見積
型名	Logical Operator		Logical Operator	Logical Operator	Logical Operator	Logical Operator		Logical Operator
F1423NBGI circleアクティブ memoryPkg. Info view_in_ar PCB Symbol, Footprint, and 3D Model サンプル入手可能今すぐ購入する	VFQFPN	24	I	Yes	Tray	1	3.434	サンプルを入手, 購入/見積
F1423NBGI8 circleアクティブ memoryPkg. Info view_in_ar PCB Symbol, Footprint, and 3D Model	VFQFPN	24	I	Yes	Reel	1		購入/見積

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ビデオ&トレーニング

IDT RF Product Benefits Overview

This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.

Transcript

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.