概要

The HS-26CLV31RH and HS-26CLV31EH are radiation hardened 3. 3V quad differential line drivers designed for digital data transmission over balanced lines, in low voltage RS-422 protocol applications. CMOS processing assures low power consumption, High-Speed, and reliable operation in the most severe radiation environments. The HS-26CLV31RH and HS-26CLV31EH accept CMOS level inputs and converts them to differential outputs. Enable pins allow several devices to be connected to the same data source and addressed independently. These devices have unique outputs that become high impedance when the driver is disabled or powered-down, maintaining signal integrity in multi-driver applications.

HS-26CLV31EH_HS-26CLV31RH Functional Diagram
HS-26CLV31EH_HS-26CLV31RH Functional Diagram
  • Electrically screened to SMD # 5962-96663
  • QML qualified per MIL-PRF-38535 requirements
  • 1.2 micron radiation hardened CMOS
  • Total dose 300krad (Si) (maximum)
  • Single event upset LET 100MeV/mg/cm2
  • Single event latch-up immune
  • Extremely low stand-by current 100μA (maximum)
  • Operating supply range 3.0V to 3.6V
  • CMOS level inputs VIH > (0.7) (VDD); VIL < (0.3) (VDD)
  • Differential outputs VOH > 1.8V; VOL < 0.5V
  • High impedance outputs when disabled or powered down
  • Low output impedance 10Ω or less
  • Full -55°C to +125°C military temperature range
  • Pb-free (RoHS compliant)

アプリケーション

  • Line transmitter for MIL-STD-1553 serial data bus

ドキュメント

設計・開発

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    ご購入 / サンプル
    型名
    HS0-26CLV31EH-Q
    circleアクティブ
    memory
    view_in_ar
    		100 5962F9666304V9A
    HS1-26CLV31EH-Q
    circleアクティブ
    memory
    view_in_ar
    		SBDIP Tube 25 5962F9666304VEC
    HS9-26CLV31EH-Q
    circleアクティブ
    memory
    view_in_ar
    		CFP Tray 25 5962F9666304VXC
    HS9G-26CLV31EH-Q
    circleアクティブ
    memory
    view_in_ar
    		CFP Tray 25 5962F9666304VYC
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