概要

The HS-201HSRH and HS-201HSEH are monolithic BiCMOS analog switches featuring power-off high input impedance, very fast switching speeds and low ON-resistance. Fabrication on our DI RSG process ensures SEL immunity and only very slight low dose rate sensitivity (ELDRS). These Class V/Q devices are tested and guaranteed for 300krad(Si) total dose performance. Power-off high input impedance enables the use of this device in redundant circuits without causing data bus signal degradation. ESD protection, overvoltage protection, fast switching times, low ON-resistance, and guaranteed radiation hardness make the HS-201HSRH ideal for any space application that requires improved switching performance.

HS-201HSEH_HS-201HSRH Functional Diagram
HS-201HSEH_HS-201HSRH Functional Diagram
  • Electrically screened to DLA SMD# 5962-99618
  • QML qualified per MIL-PRF-38535
  • Radiation performance
  • TID Rad Hard Assurance (RHA) testing
    • High dose rate (50-300rad(Si)/s): 300krad(Si)
    • Low dose rate (0.01rad(SI)/s): 50krad(Si)
  • SEL immune: DI RSG process
  • Overvoltage protection (power on, switch off): ±30V
  • Power off high impedance: ±17V
  • Fast switching times
  • tON: 110ns (max)
  • tOFF: 80ns (max)
  • Low "ON" resistance: 50Ω (max)
  • Pin compatible with industry-standard 201 types
  • Operating supply range: ±10V to ±15V
  • Wide analog voltage range (±15V supplies): ±15V
  • TTL compatible

アプリケーション

  • High speed multiplexing
  • Sample and hold circuits
  • Digital filters
  • Operational amplifier gain switching networks
  • Integrator reset circuits

ドキュメント

設計・開発

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    ご購入 / サンプル
    型名
    HS0-201HSEH-Q
    circleアクティブ
    memory
    view_in_ar
    		100 5962F9961802V9A
    HS1-201HSEH-Q
    circleアクティブ
    memory
    view_in_ar
    		SBDIP Tube 25 5962F9961802VEC
    HS9-201HSEH-Q
    circleアクティブ
    memory
    view_in_ar
    		CFP Tray 25 5962F9961802VXC
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