概要

The HS-302AEH is a dual Double-Pole, Single-Throw (DPST) analog switch fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-302AEH is pin compatible and functionally equivalent to the HS-302RH. The HS-302AEH offers convenient switching controlled by 5V digital inputs and low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current and as over exposure to radiation. The HS-302AEH is available in a 14 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C.

HS-302AEH Functional Diagram
HS-302AEH Functional Diagram
  • Electrically screened to DLA SMD# 5962-95812
  • No latch-up, dielectrically isolated device islands
  • Pin and functionally compatible with Renesas HS-302RH series analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage: 150nA (maximum, post-rad)
  • Low rON: 60Ω (maximum, post-rad)
  • Low standby supply current: ±150μA (maximum, post-rad)
  • Radiation assurance
    • High dose rate (50 to 300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 50krad(Si) (Note 1)
  • SEE for LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)

アプリケーション

  • Signal processing applications
  • Power supply control

ドキュメント

設計・開発

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Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    ご購入 / サンプル
    型名
    HS0-302AEH-Q
    circleアクティブ
    memory
    view_in_ar
    		100 5962R9581205V9A
    HS9-302AEH/PROTO
    circleアクティブ
    memory
    view_in_ar
    		CFP Tray 1
    HS9-302AEH-Q
    circleアクティブ
    memory
    view_in_ar
    		CFP Tray 25 5962R9581205VXC
    HS0-302AEH/SAMPLE
    circleアクティブ
    memory
    view_in_ar
    		DIE 5
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