概要
説明
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.
特長
- Electrically screened to DLA SMD# 5962-95813
- QML, per MIL-PRF-38535
- Radiation performance
- Total dose: 3x105rad(Si)
- SEE: For LET = 60MeV•cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)
- No latch-up, dielectrically isolated device islands
- Pinout and functionally compatible with Renesas HS-303RH and HI-303 series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 100nA (max, post-rad)
- Low rON: 70Ω (max, post-rad)
- Low standby supply current: +150μA/-100μA (max, post-rad)
製品比較
アプリケーション
設計・開発
モデル
ECADモデル
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Processing table
| 100 | 5962F9581306V9A | ||||
| SBDIP | Tube | 25 | 5962F9581306VCC | ||
| CFP | Tray | 25 | 5962F9581306VXC |
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