概要
説明
The NP90N04MDH, NP90N04NDH, NP90N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
特長
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP90N04MDH, NP90N04NDH RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = 4.5 V, ID = 45 A) NP90N04PDH RDS(on)1 = 3.4 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.0 mΩ MAX. (VGS = 4.5 V, ID = 45 A)
- High avalanche energy, High avalanche current
- Logic level drive Type
- Low input capacitance Ciss = 7500 pF TYP. (VDS = 25 V)
製品比較
アプリケーション
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| 分類 | タイトル | 日時 |
| データシート | PDF 355 KB | |
| ガイド | PDF 2.76 MB | |
| ガイド | PDF 796 KB | |
| アプリケーションノート | PDF 633 KB English | |
| カタログ | PDF 2.24 MB | |
| ガイド | PDF 596 KB | |
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