Renesas Electronics Introduces Power Semiconductor Devices Capable of Reducing Mounting Area by Half

TOKYO, Japan, September 16, 2010 — Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the development of the RJK0222DNS and RJK0223DNS, two power semiconductor devices with ultra-compact packages for use in DC/DC converters (Note 1) that provide power to the CPU, memory, and other circuit blocks of products such as servers and notebook PCs.

The new power semiconductor products each integrate a pair of power MOSFETs (Note 2) into a single package, enabling designs of DC/DC converters that are more compact with higher mounting density. The compact, low-loss 11th generation power MOSFETs, fabricated using an advanced process, (1) are contained in an ultra-compact package measuring only 3.2 millimeters (mm) × 4.8 mm × 0.8 mm (max.), making it possible to reduce the mounting area by about half compared with previous Renesas Electronics power MOSFET products, and (2) deliver efficiency of 95.2 percent, the top level in the industry, which contributes to reduced power consumption.

Information and telecommunication devices such as base stations, notebook PCs, servers, and graphics cards require multiple step-down DC/DC converters because they incorporate components, such as CPUs, GPUs, memory devices, and ASICs, that require a power supply voltage lower than that supplied by the battery. As demand grows for information devices that are smaller and more streamlined, so the need grows for DC/DC converters that are more compact, thinner, and more highly efficient.

In response to this demand, Renesas Electronics has developed the two power devices, each of which integrates a pair of power MOSFETs in an ultra-compact package. The designs benefit from the company's expertise in smaller package development and higher heat-radiation packages developed through Renesas Electronics' ultrafine power MOSFET technology.

Main features of the new products are as follows.

(1) Approximately half the mounting area, enabling more compact, high-density power supply designs

A pair of power MOSFETs used for voltage conversion is mounted on Renesas Electronics' ultra-compact package (package code HWSON3046) with mounting area of 3.2 mm × 4.8 mm. The mounting area is about half that of Renesas Electronics' existing package of 5.1 mm × 6.1 mm (package code WPAK), making it possible to design DC/DC converters that are more compact and have a higher mounting density.

(2) High efficiency among the best in the industry for reduced power consumption of power supplies

At a switching frequency of 300 kilohertz (kHz), the Renesas Electronics 11th generation low-loss power MOSFETs achieve a maximum efficiency of 95.2 percent (input voltage: 12 volts (V), output voltage: 3.3 V), which is at the top level in the industry and contributes to improved overall power supply efficiency.

Within the pair of power MOSFETs used for voltage conversion, the one used for synchronous rectification (low-side) incorporates an on-chip Schottky barrier diode. During the DC/DC converter's dead time (Note 3), the faster current switching time from the power MOSFET to the Schottky barrier diode reduces power loss. In addition, it effectively suppresses the spike voltage when the power MOSFET switches on, reducing the electromagnetic noise.

Like Renesas Electronics' existing WPAK package, the new HWSON3046 package provides excellent heat radiation and has a die pad on the bottom of the device that allows heat to pass to the printed wiring board while the power MOSFET is operating, enabling the power MOSFET to handle large currents.

Renesas Electronics plans to develop a full lineup of dual-chip products using the HWSON3046 package for a variety of DC/DC converter specifications.

Specifications of the new products can be found on the separate sheet.

(Note 1) DC/DC converter
A circuit that converts a direct current (DC) voltage to another specified voltage.

(Note 2) A pair of power MOSFETs
The first power MOSFET is used for control switching (high-side switch) and the second power MOSFET for synchronous rectification (low-side switch). The two power MOSFETs work in combination, switching on and off alternately to convert the voltage.

(Note 3) Dead time
There is a small time lag between when a power MOSFET switches off and when it achieves a fully off state. Therefore, when the control power MOSFET and synchronous rectifier power MOSFET are switching on and off alternately, there is a short period of time after one switches off before the other turns on. This waiting period is termed “dead time.”

Pricing and Availability

Samples of Renesas Electronics' new power MOSFETs are available now with pricing for each starting at US$0.55 per unit. Mass production is scheduled to begin in December 2010 and is expected to reach a combined volume of two million units per month after July 2011.

(Pricing and availability are subject to change without notice.)

About Renesas Electronics Corporation

Renesas Electronics Corporation (TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live. A global leader in microcontrollers, analog, power and SoC products, Renesas provides comprehensive solutions for a broad range of automotive, industrial, infrastructure, and IoT applications that help shape a limitless future. Learn more at renesas.com. Follow us on LinkedIn, Facebook, Twitter, and YouTube.

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The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.