概要
説明
The F5280 is a 4-channel TRX half-duplex silicon IC designed using a SiGe BiCMOS process for 5G phased-array applications at n257/n261 bands. The core IC has flexible gain and phase control on each channel to achieve fine beam steering and gain compensation between radiating channels. The core design includes standard SPI protocol that operates up to 50MHz with fast beam-steering modes.
特長
- 25GHz to 31GHz operation
- 4 radiation channels
- 100ns typical RF switch Tx/Rx mode switching time
- 20ns typical gain and phase settling time
- 3° typical RMS phase error
- 0.4dB typical RMS gain error
- Advanced SPI with 4 state memory
- 6-bit chip address
- Integrated PTAT with external biasing
- Internal temperature sensor
- Up to 50MHz SPI control
- Programmable on-chip memory
- Supply voltage: +2.3V to +2.7V
- -40°C to +105°C ambient operating temperature range
- 3.6 × 3.6 mm, 49-BGA package
製品比較
アプリケーション
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| 分類 | タイトル | 日時 |
| データシート－簡略版 | PDF 151 KB | |
| ガイド | PDF 2.24 MB | |
| 製品概要 | PDF 728 KB | |
3件
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設計・開発
モデル
ECADモデル
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Processing table
| FCCSP | 49 | K | Tray | 3 | サンプルを入手, | |
| FCCSP | 49 | K | Reel | 3 |
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ビデオ&トレーニング
mmWave 5G Front Ends with Dynamic Array Power (DAP™) Optimization Deliver Differentiated Designs
Tumay delivers an overview of designing mmWave 5G phased arrays and how to differentiate your designs with the unique features of Renesas active beamforming ICs.
Video List
ニュース＆ブログ
| ニュース | 2021年11月10日 | ||
| IDT、アクティブアンテナシステム分野での成長を加速する マイクロ波／ミリ波製品を発表 | ニュース | 2017年9月26日 |
