Evaluation Board for F0452B Switch / LNA
The F0452BEVB is a fully populated test board enabling easy evaluation of the F0452B Switch / LNA performance.
主要ドキュメント:
概要
説明
The F0452B is an integrated dual-path RF front-end consisting of an RF switch and two gain stages with 6dB gain control used in the analog front-end receiver of an Active Antenna System (AAS). The F0452B supports frequencies from 2300MHz to 2700MHz.
The F0452B provides 34dB gain with +23dBm OIP3, +15dBm output P1dB, and a 1.5dB noise figure at 2600MHz. Gain is reduced 6dB in a single step with a maximum settling time of 31ns. The device uses a single 3.3V supply and 130mA of IDD.
The F0452B is offered in a 5mm × 5mm × 0.8mm, 32-LGA package with 50Ω input and output amplifier impedances for ease of integration into the signal path.
特長
- Gain at 2600MHz
- 34dB typical in High Gain Mode
- 28dB typical in Low Gain Mode
- 1.5dB NF at 2600MHz
- +23dBm OIP3 at 2600MHz
- OP1dB at 2600MHz
- +15dBm in High Gain Mode
- +14dBm in Low Gain Mode
- 50Ω single-ended input/output amplifier impedances
- IDD = 130mA
- Independent Standby Mode for power savings
- Supply voltage: +3.15V to +3.45V
- 5mm × 5mm, 32-LGA package
- -40 °C to +105 °C exposed pad operating temperature range
製品比較
アプリケーション
- Multi-mode, multi-carrier receivers
- 4.5G (LTE Advanced)
- 5G band 42
ドキュメント
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| 分類 | タイトル | 日時 |
| データシート | PDF 2.82 MB | |
| ガイド | PDF 2.24 MB | |
| EOL通知 | PDF 1.11 MB | |
| EOL通知 | PDF 1.07 MB | |
| 製品変更通知 | PDF 666 KB | |
| アプリケーションノート | PDF 520 KB | |
6件
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Processing table
| LGA | 32 | K | Yes | Tray | 3 | ||
| LGA | 32 | K | Yes | Reel | 3 |
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ビデオ&トレーニング
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
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