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概要

説明

The F1241 IF VGA featuring FlatNoise™ technology improves system SNR, especially at lower gain settings. By keeping both IP3O and NF flat while gain is backed off, the system SNR is improved significantly under high-level interferer conditions, especially when considering alias noise in an IF sampling receiver. The fast-settling, parallel mode gain step of 1.0dB coupled with the excellent differential non-linearity allows for SNR to be maximized further by targeting the minimum necessary gain in small, accurate increments. The matched output does not require a terminating resistor, thus the gain and distortion performance are preserved when driving Bandpass Anti-Alias filters.

特長

  • Ideal for systems with high SNR requirements
  • 20dB typical maximum gain
  • 31dB gain control range
  • 5-bit control
  • 1.0dB gain steps
  • Excellent noise figure ~ 4.0dB
  • 5mm x 5mm 32-pin package
  • 200Ω differential matched input
  • 200Ω differential matched output
  • No termination resistor required
  • NF degrades < 2dB at 10dB reduced gain
  • 10MHz to 500MHz frequency range
  • Ultra-linear: IP3O +47dBm typical
  • Excellent 2nd harmonic rejection
  • Parallel control
  • External current setting resistors
  • Very fast settling < 15nsec
  • Individual Power-Down modes
  • Extremely low power consumption:  79mA/Ch

製品比較

アプリケーション

  • Base station 2G, 3G, 4G, TDD radio cards
  • Repeaters and E911 systems
  • Digital pre-distortion
  • Point-to-Point infrastructure
  • Public safety infrastructure
  • WiMAX receivers and transmitters
  • Military systems, JTRS radios

ドキュメント

分類 タイトル 日時
データシート PDF 1.91 MB
ガイド PDF 2.24 MB
ガイド PDF 2.83 MB
製品変更通知 PDF 39 KB
製品変更通知 PDF 35 KB
製品変更通知 PDF 33 KB
6件

設計・開発

ソフトウェア/ツール

ソフトウェアダウンロード

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ボード&キット

モデル

ECADモデル

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Diagram of ECAD Models

ビデオ&トレーニング

IDT RF Product Benefits Overview

This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.

Transcript

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.