概要
説明
The F1241EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F1241 Dual Intermediate Frequency Digital Variable Gain Amplifier. Attenuation may be set using either the F1241’s parallel control input or its serial control input by setting Vmode to the appropriate value.
The F1241EVS is a complete hardware and software solution that allows customers to digitally control the F1241EVBI with the USB output on a computer. The kit includes the F1241EVBI board, as well as a USB Digital Control Board and interface cables. The software, guides , and instructional videos are available for download/viewing on this page.
特長
- F1241EVBI (Evaluation Board)
- SMA connectors for RF input and RF output
- Power supply connected either through SMA connector or header pins
- Vmode pin to select either serial or parallel control
- Attenuator settable using header pins using either serial port interface (SPI) or parallel control interface
- Low current power down (standby) feature for both RF channels
- F1241EVS (Evaluation Solution)
- Includes product evaluation board described above
- Includes Digital Control Board and all necessary cables
- Interfaces with the Digital Control Software – can be downloaded from this page
アプリケーション
設計・開発
ソフトウェア／ツール
Tips for Using This Parametric Table:
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- Export button in header: Export the filtered results of the table to an Excel document
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- Hide column button in column headers: Select to hide columns in table
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- Multiselect checkboxes at beginning of each row in table: Select these checkboxes to compare products against each other
- Document icon next to product name in row: View the featured document for this product
- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product
ビデオ&トレーニング
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
