Evaluation Board for the F159V Integrated TRx IC
The F159VEVB is a fully populated test board enabling easy evaluation of the F159V Integrated TRx IC.
主要ドキュメント:
概要
説明
The F159V is a Dual-Path Integrated TRx IC that has an operating frequency range of 450MHz to 2800MHz. The device provides two independent transmit paths each with 18.3dB typical maximum gain with corresponding output noise floor of -142.5dBm/Hz, +31dBm OIP3, and +14dBm output P1dB designed to operate with a single +3.3V supply while consuming only 685mA DC current. Each signal path includes a quadrature modulator, voltage variable attenuator (VVA), digital step attenuator (DSA), and a fixed gain amplifier. The device supports a total of 32dB VVA adjustment range using a SPI-controlled 11-bit DAC, and each DSA has 31dB gain control range in 1dB steps using SPI control.
An on-chip frequency synthesizer is shared by both paths and is optimized for use in multi-carrier, multi-mode FDD and TDD base station transmitters achieving GSM-grade performance. The synthesizer offers both an integer mode and fractional mode. It requires an external loop filter and an external reference oscillator in the frequency range of 10MHz to 250MHz.
The F159V is packaged in a 10mm x 10mm, 68-pin QFN with 110Ω differential drive from external I/Q DACs and single-ended 50Ω RF output impedance for ease of integration into the signal-path lineup for each of the two transmitter paths. Each path has independent power supply control thereby allowing optimum power efficiency.
特長
- Independent dual-path operation
- RF output frequency: 450MHz to 2800MHz
- 18.3dB typical maximum gain (no attenuation)
- +31dBm OIP3 (no attenuation)
- +14dBm Output P1dB (no attenuation)
- 13dB NF corresponds to -142.5dBm/Hz output noise floor (no attenuation)
- Output noise floor -152.3dBm/Hz (VVA = 14dB, DSA = 1dB)
- Channel Isolation: 47dB
- DSA with 31dB total gain range in 1dB steps
- Multiple VVAs with 32dB gain range controlled by on-chip SPI controlled 11-bit DAC
- Variable Gain amplifier (VGA) is comprised of DSAs, VVAs, and a fixed-gain amplifier
- I lead Q by 90 degrees for high side LO injection
- Supports ZIF or CIF architectures
- Common-mode voltage range: +0.1V to +0.8V
- Integer-N and Fractional-N Synthesizer
- Direct 110Ω differential driven from I/Q DAC
- 50Ω single-ended RF output impedance
- Internal or external LO select
- +3.3V supply voltage at 685mA (LO_Out not turned on)
- Specified case temperature: -20°C to +115°C
- 10 × 10 mm, 68-VFQFPN package
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Processing table
| VFQFPN | 68 | N | Yes | Tray | 3 | サンプルを入手, | |
| VFQFPN | 68 | N | Yes | Reel | 3 |
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ビデオ&トレーニング
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
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