Renesas Radiation Hardened Power Solution for RTG4 FPGA
Over the last decade, satellites and spacecraft have seen an exponential increase in the need for onboard data processing and storage demands. Additionally, major...
概要
説明
The ISL70244SEH features two low-power amplifiers optimized to provide maximum dynamic range. These op amps feature a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front end that provides ultra-fast slew rates positively proportional to a given step size; thereby increasing accuracy under transient conditions, whether it’s periodic or momentary. They also offer low power, low offset voltage, and low-temperature drift, making the ISL70244SEH ideal for applications requiring both high DC accuracy and AC performance. With <5μs recovery for Single Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the number of filtering components needed is drastically reduced. The ISL70244SEH is also immune to single-event latch-up because it is fabricated in the Renesas proprietary PR40 Silicon On Insulator (SOI) process. The amplifiers are designed to operate over a single supply range of 2.7V to 40V or a split supply voltage range of ±1.35V to ±20V. Applications for these amplifiers include precision instrumentation, data acquisition, precision power supply controls, and process controls. The ISL70244SEH is available in a 10 Ld hermetic ceramic flatpack that operates across the temperature range of -55 °C to +125 °C.
特長
- Electrically screened to DLA SMD# 5962-13248
- Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
- <5µs recovery from SET (LETTH = 86.4MeV•cm2/mg)
- Unity gain stable
- Rail-to-rail input and output
- Wide gain bandwidth product 19MHz
- Wide single and dual supply range 2.7V to 40V maximum
- Low input offset voltage 400µV (+25 °C, maximum)
- Low current consumption (per amplifier) 1.2mA, typical
- No phase reversal with input overdrive
- Slew rate -Large signal 60V/µs
- Operating temperature range -55 °C to +125 °C
- ISL70244SEH radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s) 300krad(Si)
- Low dose rate (0.01rad(Si)/s) 50krad(Si)
- SEE hardness (see SEE report for details) - SEL/SEB LETTH (VS = ±19V) 86.4MeV•cm2/mg
製品比較
アプリケーション
- Precision instruments
- Active filter blocks
- Data acquisition
- Power supply control
- Process control
設計・開発
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モデル
ECADモデル
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Processing table
| CFP | Tray | 1 | Not Applicable | サンプルを入手, | ||
| CFP | Tray | 25 | 5962F1324801VXC | Not Applicable | ||
| 100 | 5962F1324801V9A | |||||
| DIE | 5 |
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