Evaluation Board for F0443 Dual Matched Broadband RF DVGA
The F0443EVB is a fully populated evaluation board which allows the customer to easily evaluate the F0443 Dual Matched Broadband RF DVGA. The attenuation setting may be...
Overview
Description
The F0443 is a highly integrated 0.6GHz to 2.7GHz dual-channel RF digital variable gain amplifier designed for use in diversity/MIMO receivers. The F0443 provides two independent receiver paths each with 29.5dB typical maximum gain and 3.2dB NF at 2.5GHz.
For each path, gain control is split into four separate digital step attenuators: DSA0 provides 6dB of attenuation in a single step using SPI/I3C control. Its counterpart, DSA1, also provides 6dB of attenuation in a single step but it is programmed instead using an external direct control pin. DSA2 yields 29dB of SPI/I3C-controlled attenuation in 1dB steps, while its counterpart, DSA3, includes 18dB attenuation in 6dB steps programmed via two external control pins. The device offers +39dBm nominal output IP3 at 2.5GHz using 372mA total ICC for two active paths with a +5V supply voltage.
The F0443 is packaged in a 7mm × 7mm, 48-LGA with 50Ω single-ended RF input and RF output impedances for easy integration into the signal path.
Features
- RF Frequency Range: 0.6GHz to 2.7GHz
- Gain at 2.5GHz:
- 29.5dB typical max gain in non-bypass mode
- 10.9dB typical max gain in bypass mode
- DSA Control:
- DSA0: Single 6dB step via SPI/I3C control
- DSA1: Single 6dB step via 1-bit external pin control
- DSA2: 29dB range in 1dB steps via SPI/I3C control
- DSA3: 18dB range in 6dB steps via 2-bit external pin control
- +39dBm OIP3 at 2.5GHz
- NF at 2.5GHz
- 3.2dB typical in non-bypass mode
- 8.9dB typical in bypass mode
- +19.7dBm OP1dB at 2.5GHz
- ICC = 372mA
- Standby Mode for power savings with 9mA standby current
- 50Ω single-ended input/output impedances
- 1.8V logic support
- Operating temperature range: -40 °C to +105 °C
- 7mm × 7mm 48-LGA package
Comparison
Applications
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 6.00 MB | |
| Guide | PDF 2.24 MB | |
| Product Change Notice | PDF 771 KB | |
| Product Brief | PDF 506 KB | |
| Manual - Hardware | PDF 1.05 MB | |
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Design & Development
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Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| LGA | 48 | I | Yes | Tray | 3 | 12 | Get Samples, | |
| LGA | 48 | I | Yes | Reel | 3 |
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Videos & Training
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List