概要
説明
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
特長
- High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25ns (max.) – Commercial: 15/20/25ns (max.)
- Low-power consumption
- Battery backup operation – 2V data retention voltage (LA version only)
- Produced with advanced CMOS high-performance technology
- CMOS process virtually eliminates alpha particle soft-error rates
- Input and output directly TTL-compatible
- Static operation: no clocks or refresh required
- Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin Dip and 24-pin SOIC packages
- Military product compliant to MIL-STD-833, Class B
製品比較
アプリケーション
設計・開発
モデル
ECADモデル
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Processing table
Pkg. Type |
Lead Count (#) |
Temp. Grade |
Pb (Lead) Free |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Price (USD) | 1ku |
ご購入 / サンプル |
|
|---|---|---|---|---|---|---|---|---|
| 型名 | ||||||||
| SOIC | 24 | C | Yes | Tube | 1 | サンプルを入手, | ||
| SOIC | 24 | C | Yes | Reel | 1 | 4.504 | ||
| SOIC | 24 | I | Yes | Tube | 1 | 4 | サンプルを入手, | |
| SOIC | 24 | I | Yes | Reel | 1 | 4.697 | ||
| SOIC | 24 | C | Yes | Tube | 1 | サンプルを入手, | ||
| SOIC | 24 | C | Yes | Reel | 1 | 4.504 | ||
| SOIC | 24 | I | Yes | Tube | 1 | 4.992 | サンプルを入手, | |
| SOIC | 24 | I | Yes | Reel | 1 | 4.697 | ||
| SOIC | 24 | C | Yes | Tube | 1 | 4.618 | サンプルを入手, | |
| SOIC | 24 | C | Yes | Reel | 1 | 4.504 | ||
| SOIC | 24 | C | Yes | Reel | 1 | 4.504 |
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