概要

説明

The R1RP0408D Series is a 4-Mbit High-Speed static RAM organized 512-k word × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.

特長

  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 130 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max), 1.0mA (max) (L-version)
  • Data retention current : 0.5mA (max) (L-version)
  • Data retention voltage : 2.0V (min) (L-version)
  • Center VCC and VSS type pin out

製品比較

アプリケーション

ドキュメント

設計・開発

モデル