概要

RAJ240055/RAJ240057は、MCUとアナログ・フロントエンドデバイスを1パッケージ化したリチウムイオン・バッテリ残量管理IC(FGIC)です。 複数の低消費電力モードを持ち、超低消費電力動作で高いパフォーマンスを実現できるルネサスRL78 CPUコアと、様々なバッテリ保護および管理機能を内蔵しています。RAJ240055/RAJ240057は、制御ファームウェアを内蔵フラッシュメモリに格納し、内蔵されたアナログ回路およびデジタル回路を制御して、電池の電圧／電流／温度測定、残量推定、過電流／電圧／温度保護などの電池管理動作を実行することができます。

RAJ240055DNP, RAJ240057 Functional Diagram
RAJ240055DNP, RAJ240057 Functional Diagram
  • Fully integrated battery management solution with battery capacity measurement and programmable protection capability.
  • Supports up to 4 Li-ion or Li-Polymer battery cells in series.
  • Supports various self-diagnosis functions for functional safety.
  • Integrated with Renesas Ultra Low Power RL78 CPU core for multi-function process.
  • Memory 
    Code flash memory: 64 kB (RAJ240055) / 128 kB (RAJ240057) 
    Data flash memory (up to 100,000 erase/write cycles): 4 kB 
    SRAM: 4 kB (RAJ240055) / 7 kB (RAJ240057)
  • Clock generator 
    High speed on-chip oscillator: up to 32 MHz 
    Low speed on-chip oscillator: 15 kHz 
    AFE high speed on-chip oscillator: 4.194 MHz 
    AFE low speed on-chip oscillator: 131.072 kHz
  • General Purpose I/O Ports 
    Total: 12 pins 
    CMOS input/output: 6, CMOS input: 1 
    N-ch open drain Input/output [6 V tolerance]: 3 
    High voltage input [30 V tolerance]: 1 
    High voltage input/output [VCC tolerance]: 1
  • Serial interface 
    CSI (SPI): 1 channel 
    UART: 2 channels 
    Simplified I2C: 1 channel 
    I2C: 1 channel
  • Timer 
    MCU 16-bit timer: 6 channels 
    MCU 12-bit interval timer: 1 channel 
    AFE timer: 2 channels
    • AFE timer A: setting range: 125 ms to 64 s
    • AFE timer B: setting range：61 us to 2 s
  • Embedded A/D converter 
    AFE 15-bit resolution sigma-delta A/D converter
    • Automatic measurement mode
    • Continuous measurement mode
  • Current integrating circuit 
    18-bit resolution sigma-delta A/D converter
  • Impedance measurement circuit 
    Simultaneous measurement of battery voltage and current
  • Over current detection circuit 
    Short circuit current detection: 2 channels 
    Charge overcurrent detection 
    Discharge overcurrent detection 
    Charge wakeup current detection 
    Discharge wakeup current detection 
    DBPT current detection
  • Series regulator 
    2.0 V or 3.3 V output can be selected (> 20 mA)
  • Charge and Discharge MOSFET control 
    Supports High-side Nch MOSFET drive (built-in charge pump circuit)
  • Ultra Low Power consumption 
    Power down mode: 1 uA 
    Sleep mode1 current: 20 uA (DFET and CFET off) 
    Sleep mode2 current: 40 uA (DFET and CFET on) 
    In Sleep mode, enable H/W protection function
  • Additional features 
    Internal Cell Balancing Circuit (>10 mA) 
    Internal Watchdog Timer (MCU) 
    MCU Runaway Detection Circuit (AFE) 
    3 Thermistor Sensor Ports with On-chip Pull-up Resistors 
    Random cell connection tolerant
  • Voltage and temperature condition 
    Power supply voltage: VCC = 2.2 to 25.0 V 
    Operating ambient temperature TA = -40 to +85°C
  • Package Information 
    32 pin plastic mold QFN 
    ([Body] 4.0 mm x 4.0 mm, 0.4 mm pitch)

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート
RAJ240055 / RAJ240057 Data sheet
PDF 2.63 MB
製品別信頼性資料
RAJ240057 Reliability Report
PDF 194 KB
パンフレット
[パンフレット] ルネサス開発環境 フラッシュ書き込みツール PG-FP6
PDF 600 KB 英語 , 简体中文
3件

設計・開発

ECADモデル

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製品選択

    Processing table
    Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    ご購入 / サンプル
    型名
    RAJ240057A20DNP#HC1
    circleアクティブ
    memory
    view_in_ar
    		QFN Tape & Reel 3
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