概要
説明
RAJ240055/RAJ240057は、MCUとアナログ・フロントエンドデバイスを1パッケージ化したリチウムイオン・バッテリ残量管理IC(FGIC)です。 複数の低消費電力モードを持ち、超低消費電力動作で高いパフォーマンスを実現できるルネサスRL78 CPUコアと、様々なバッテリ保護および管理機能を内蔵しています。RAJ240055/RAJ240057は、制御ファームウェアを内蔵フラッシュメモリに格納し、内蔵されたアナログ回路およびデジタル回路を制御して、電池の電圧／電流／温度測定、残量推定、過電流／電圧／温度保護などの電池管理動作を実行することができます。
特長
- Fully integrated battery management solution with battery capacity measurement and programmable protection capability.
- Supports up to 4 Li-ion or Li-Polymer battery cells in series.
- Supports various self-diagnosis functions for functional safety.
- Integrated with Renesas Ultra Low Power RL78 CPU core for multi-function process.
- Memory
Code flash memory: 64 kB (RAJ240055) / 128 kB (RAJ240057)
Data flash memory (up to 100,000 erase/write cycles): 4 kB
SRAM: 4 kB (RAJ240055) / 7 kB (RAJ240057) - Clock generator
High speed on-chip oscillator: up to 32 MHz
Low speed on-chip oscillator: 15 kHz
AFE high speed on-chip oscillator: 4.194 MHz
AFE low speed on-chip oscillator: 131.072 kHz - General Purpose I/O Ports
Total: 12 pins
CMOS input/output: 6, CMOS input: 1
N-ch open drain Input/output [6 V tolerance]: 3
High voltage input [30 V tolerance]: 1
High voltage input/output [VCC tolerance]: 1 - Serial interface
CSI (SPI): 1 channel
UART: 2 channels
Simplified I2C: 1 channel
I2C: 1 channel - Timer
MCU 16-bit timer: 6 channels
MCU 12-bit interval timer: 1 channel
AFE timer: 2 channels- AFE timer A: setting range: 125 ms to 64 s
- AFE timer B: setting range：61 us to 2 s
- Embedded A/D converter
AFE 15-bit resolution sigma-delta A/D converter- Automatic measurement mode
- Continuous measurement mode
- Current integrating circuit
18-bit resolution sigma-delta A/D converter - Impedance measurement circuit
Simultaneous measurement of battery voltage and current - Over current detection circuit
Short circuit current detection: 2 channels
Charge overcurrent detection
Discharge overcurrent detection
Charge wakeup current detection
Discharge wakeup current detection
DBPT current detection - Series regulator
2.0 V or 3.3 V output can be selected (> 20 mA) - Charge and Discharge MOSFET control
Supports High-side Nch MOSFET drive (built-in charge pump circuit) - Ultra Low Power consumption
Power down mode: 1 uA
Sleep mode1 current: 20 uA (DFET and CFET off)
Sleep mode2 current: 40 uA (DFET and CFET on)
In Sleep mode, enable H/W protection function - Additional features
Internal Cell Balancing Circuit (>10 mA)
Internal Watchdog Timer (MCU)
MCU Runaway Detection Circuit (AFE)
3 Thermistor Sensor Ports with On-chip Pull-up Resistors
Random cell connection tolerant - Voltage and temperature condition
Power supply voltage: VCC = 2.2 to 25.0 V
Operating ambient temperature TA = -40 to +85°C - Package Information
32 pin plastic mold QFN
([Body] 4.0 mm x 4.0 mm, 0.4 mm pitch)
製品比較
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| 分類 | タイトル | 日時 |
| データシート | PDF 2.63 MB | |
| 製品別信頼性資料 | PDF 194 KB | |
| パンフレット | PDF 600 KB 英語 , 简体中文 | |
3件
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設計・開発
モデル
ECADモデル
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Processing table
| QFN | Tape & Reel | 3 |
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