概要
説明
The RAA220001 is a high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. In the RAA220001, the upper and lower gates are both driven to an externally applied voltage that provides the capability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220001 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature that is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This design is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.
特長
- Dual MOSFET drives for synchronous rectified bridge
- Advanced adaptive zero shoot-through protection
- Low standby bias current
- 36V internal bootstrap switcher
- Bootstrap capacitor overcharging prevention
- Integrated high-side gate-to-source resistor to prevent from self turn-on due to high input bus dV/dt
- Pre-POR overvoltage protection for start-up and shutdown
- Power rails undervoltage protection
- Expandable bottom copper pad for enhanced heat sinking
- Dual flat no-lead (DFN) package
- Near chip-scale package footprint; improves PCB efficiency and thinner in profile
- Pb-free (RoHS compliant)
製品比較
アプリケーション
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| 分類 | タイトル | 日時 |
| データシート | PDF 262 KB | |
| 製品変更通知 | PDF 179 KB | |
| 製品変更通知 | PDF 326 KB | |
| アプリケーションノート | PDF 509 KB | |
| アプリケーションノート | PDF 397 KB | |
| アプリケーションノート | PDF 576 KB | |
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設計・開発
モデル
ECADモデル
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Processing table
| DFN | Reel | 3 | サンプルを入手, |
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