概要

The RAA220002 is a dual high frequency MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified buck converter topology. The RAA220002's upper and lower gates are both driven to an externally applied voltage, which provides the ability to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The RAA220002 has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. The RAA220002's overvoltage protection feature is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) through a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load if the upper MOSFET(s) becomes shorted.

RAA220002 Functional Diagram
RAA220002 Functional Diagram
  • Dual independent MOSFET driver suitable for multi-phase DC/DC applications
  • Dual MOSFET drives for synchronous rectified bridge
  • Advanced adaptive zero shoot-through protection
  • Low standby bias current
  • 36V internal bootstrap switcher
  • Bootstrap capacitor overcharging prevention
  • Integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt
  • Pre-POR overvoltage protection for start-up and shutdown
  • Power rail undervoltage protection
  • Expandable bottom copper pad for enhanced heat sinking
  • Thin Dual Flat No-lead (TDFN) package
  • Near chip-scale package footprint; improves PCB efficiency and thinner in profile
  • Pb-free (RoHS compliant)

ドキュメント

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分類 タイトル 日時
データシート
RAA220002 Datasheet
PDF 292 KB
製品変更通知
PCN21057 - Alternate assembly facility of the listed Renesas QFN / TQFN packaged products
PDF 179 KB
製品変更通知
PCN20029A - Alternate bond wire material and assembly facility of the listed Renesas QFN packaged products
PDF 326 KB
アプリケーションノート
AN1681: Grounding Techniques
PDF 509 KB
アプリケーションノート
AN1684: Nonideality of Ground
PDF 397 KB
アプリケーションノート
AN1116: CMOS Applications Information
PDF 576 KB
6件

設計・開発

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製品選択

    Processing table
    Pkg. Type
    Carrier Type
    Moisture Sensitivity Level (MSL)
    ご購入 / サンプル
    型名
    RAA220002GNP#HA0
    circleアクティブ
    memory
    spa
    view_in_ar
    サンプル入手可能
    		 TDFN Reel 3 サンプルを入手,
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