概要
説明
The Renesas F6522SEVS Evaluation Kit is designed to reduce the learning cycle, build system-level confidence and enable a rapid time to market with the F6522 IC. The kit includes all the essential components required for the rapid validation and evaluation of the electrical performance characteristics of the F6522 Active Beamforming IC.
Included Components:
- RFIC Evaluation Board
- Digital Interface Board
- USB Cable (USB-A to USB-B micro)
- Power Supply Cable
- Digital Interconnect Cable
- Renesas Beamforming EVS Software and Device Drivers (web download)
- RF De-Embed Files (web download)
特長
The Renesas F6522 Evaluation Kit includes the following features to enable rapid learning and precise and thorough evaluation of the F6522 IC:
- 50Ω 2.92mm interface to RF IOs
- De-embed files for shifting measurement plane to the I/O balls
- Standard header interface for DC supply
- Jumper configurable IC SPI address
- Clip-on test point access for voltage sense
- DC supply bypassing capacitors
- A trigger output for transient measurements
- Renesas beamforming software with intuitive graphical user interface
- Individual channel and chip-level Enable, Gain, Phase and Bias controls
- Data logging of all programming commands within GUI
- User definable beam lookup tables and gain mapping tables
アプリケーション
設計・開発
Processing table
Tips for Using This Parametric Table:
- Hide Filters button in header: Collapse or expands filters
- Column sort buttons in header: Sort Column alphabetically / numerically descending or ascending
- Reset button in header: Reset all filters to the page default
- Full Screen button in header: Expand the table to full screen view (user must close out of full screen before they can interact with rest of page)
- Export button in header: Export the filtered results of the table to an Excel document
- Filter parts search bar in header: Type to filter table results by part number
- Hide column button in column headers: Select to hide columns in table
- AND / OR toggle switches in header: Toggles the logic of this particular filter to be “AND” or “OR” logic for filtering results
- Multiselect checkboxes at beginning of each row in table: Select these checkboxes to compare products against each other
- Document icon next to product name in row: View the featured document for this product
- Chip icon next to the right of the document icon in row: View the block diagram for this product
- Cart icon to the right of the chip icon: Indicates that samples are available for this product
ビデオ&トレーニング
IDT RF Product Benefits Overview
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
ニュース＆ブログ
| IDT、アクティブアンテナシステム分野での成長を加速する マイクロ波／ミリ波製品を発表 | ニュース | 2017年9月26日 |