Evaluation Board for F1471 RF Amplifier - 700MHz to 1100MHz Frequency Band
The F1471EVB-0P9 is a fully populated evaluation board specifically designed to evaluate the frequency band of 700MHz to 1100MHz for the F1471 High Gain RF Amplifier.
The F1471 is a high linearity RF driver amplifier designed to operate within the 400MHz to 4200MHz frequency band. Utilizing a single 5V power supply and only 130mA of ICQ, the F1471 provides 17dB of gain and +28.5dBm OP1dB.
The F1471 is packaged in a 3mm × 30mm, 16-VFQFPN package, with matched 50Ω input and output impedances for ease of integration into the signal path.
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Type | Title | Date |
Datasheet | PDF 1.25 MB | |
Brochure | PDF 6.07 MB 日本語 | |
Product Change Notice | PDF 674 KB | |
Guide | PDF 2.24 MB | |
Application Note | PDF 480 KB | |
Product Brief | PDF 983 KB | |
Product Brief | PDF 506 KB | |
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The F1471EVB-0P9 is a fully populated evaluation board specifically designed to evaluate the frequency band of 700MHz to 1100MHz for the F1471 High Gain RF Amplifier.
The F1471EVB-2P1 is a fully populated evaluation board specifically designed to evaluate the frequency band of 1700MHz to 2300MHz for the F1471 High Gain RF Amplifier.
The F1471EVB-2P6 is a fully populated evaluation board specifically designed to evaluate the frequency band of 2300MHz to 2900MHz for the F1471 High Gain RF Amplifier.
The F1471EVB-3P6 is a fully populated evaluation board specifically designed to evaluate the frequency band of 3300MHz to 3900MHz for the F1471 High Gain RF Amplifier.
The F1471EVB-4P0 is a fully populated evaluation board specifically designed to evaluate the frequency band of 3800MHz to 4200MHz for the F1471 High Gain RF Amplifier.
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
This video highlights the customer benefits of IDT's (acquired by Renesas) innovative RF products, which offer up to 10x improvement in RF performance. Key technologies include glitch-free technology for smooth transitions, flat-noise technology for consistent noise performance, zero-distortion technology for minimal intermodulation distortion, and more.
Transcript
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
News | Feb 28, 2019 | ||
News | Dec 17, 2015 |