MRAM Evaluation Kit
The M3016 evaluation kit contains the 16Mbit MRAM and enables users to develop interactive hardware solutions using the popular Arduino type board. The plug-n-play kit...
The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
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分類 | タイトル | 日時 |
データシート | PDF 1.00 MB | |
EOL通知 | PDF 1.08 MB | |
Product Advisory | PDF 315 KB | |
概要 | PDF 1.26 MB | |
Product Advisory | PDF 201 KB | |
アプリケーションノート | PDF 98 KB | |
6件
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The M3016 evaluation kit contains the 16Mbit MRAM and enables users to develop interactive hardware solutions using the popular Arduino type board. The plug-n-play kit...
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I/O Frequency (MHz) |
Pkg. Type |
Temp. Range |
Carrier Type |
Price (USD) | 1ku |
ご購入 / サンプル |
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型名 | ||||||
108 | SOIC | -40 to 85°C | Tray | |||
108 | SOIC | -40 to 85°C | Reel | |||
108 | SOIC | -40 to 105°C | Tray | |||
108 | SOIC | -40 to 105°C | Reel | |||
108 | DFN | -40 to 85°C | Tray | 29.94 | ||
108 | DFN | -40 to 85°C | Reel | |||
108 | DFN | -40 to 105°C | Tray | 37.43 | ||
108 | DFN | -40 to 105°C | Reel | |||
54 | SOIC | -40 to 85°C | Tray | 28.45 | ||
54 | SOIC | -40 to 85°C | Reel | |||
54 | SOIC | -40 to 105°C | Tray | 35.55 | ||
54 | SOIC | -40 to 105°C | Reel | |||
54 | DFN | -40 to 85°C | Tray | 28.45 | ||
54 | DFN | -40 to 85°C | Reel | |||
54 | DFN | -40 to 105°C | Tray | |||
54 | DFN | -40 to 105°C | Reel |
Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.