概要

The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.

ISL70040SEH_ISL73040SEH Functional Diagram
ISL70040SEH_ISL73040SEH Functional Diagram
  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
  • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
  • TA = -55°C to +125°C
  • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
  • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
  • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
  • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
  • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233

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ISL70040SEH, ISL73040SEH and ISL71040M Steady State iSim Model
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The ISL70040SEHEV2Z evaluation platform evaluates the ISL70040SEH alongside the ISL70023SEH. The same board can be used to evaluate the ISL73040SEH alongside the

主要ドキュメント:
ISL70040SEHEV2Z Evaluation Board Manual
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Evaluation
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The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...

主要ドキュメント:
ISL70040SEHEV3Z Evaluation Board Manual
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ISL73040SEHEV4Z評価ボードは、ISL73040SEHローサイドGaNドライバとISL73024SEH 200V GaN FETを使用してハーフブリッジパワーステージを構築する方法を示します。ISL73040SEHは、4.5Vゲートドライブ電圧(VDRV)で動作します。これはゲート電圧が...

主要ドキュメント:
ISL73040SEHEV4Z Evaluation Board Manual
ISL70040SEHEV5Z Eval Board

ISL70040SEHEV5Z

Evaluation
詳しくはこちら

Evaluation Board for the ISL70040SEH and ISL70020SEH (40V GaN FET)

The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH alongside the ISL70020SEH. The ISL70040SEH is designed to drive enhancement mode Gallium...

主要ドキュメント:
ISL70040SEHEV5Z Evaluation Board Manual

ISLVERSALDEMO2Z

Demonstration
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Power Management Reference Design for AMD Versal XQRVC1902

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主要ドキュメント:
ISLVERSALDEMO2Z Demonstration Board Manual

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Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    DLA SMD
    ご購入 / サンプル
    型名
    ISL70040SEHL/PROTO
    circleアクティブ
    memory
    spa
    view_in_ar
    		CLCC Tray 1
    ISL70040SEHVL
    circleアクティブ
    memory
    spa
    view_in_ar
    		CLCC Tray 25 5962R1723301VXC
    ISL70040SEHVX
    circleアクティブ
    memory
    view_in_ar
    		100 5962R1723301V9A
    ISL70040SEHX/SAMPLE
    circleアクティブ
    memory
    view_in_ar
    		Die Waffle Pack 5
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