概要

The F2932 is a high-reliability, low-insertion loss, 50Ω single-pole double-throw (SP2T) absorptive RF switch designed for a wide range of markets and applications. This device covers a broad frequency range from 50MHz to 8000MHz, has an operating temperature range of -40 °C to +105 °C, and a wide supply voltage range of 2.7V to 5.5V. Designed for high-power handling, the F2932 has a P1 dB as high as 36.5dBm, supporting a peak operating power of 34dBm in the through path and a hot switching power of 27dBm into the terminated RF port. In addition to providing low-insertion loss, the F2932 also delivers high isolation and low distortion performance while providing a 50Ω termination to the unused RF ports.

The F2932 uses a single positive supply voltage supporting three logic control pins using either 3.3V or 1.8V control logic. The ENABLE feature puts the part in all paths off state and disables the control of VCTL, when used.

F2932 Block Diagram
F2932 Pinout
F2932 Control Pin Interface
F2932 Block Diagram
F2932 Pinout
F2932 Control Pin Interface
  • Dual symmetric broadband, absorptive RF ports
  • High-performance RF at 2GHz
    • RFC-RFX Isolation of 67dB
    • Insertion Loss of 0.79dB
  • High continuous RF CW power handling
    • Selected RF path: 34dBm
    • Terminated RF path: 27dBm
  • High linearity:
    • IIP2 of 111dBm
    • IIP3 of 64dBm
  • 3.3V and 1.8V compatible control logic
  • Operating temperature of -40 °C to +105 °C
  • Enable feature puts the part in all paths off state and disables the control of VCTL
  • 4mm x 4mm 16-pin QFN package

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート
F2932 Datasheet REV1
PDF 4.75 MB
製品変更通知
PCN# : 240016 Add JCET, China as an alternate assembly location on select VFQFPN packages
PDF 764 KB
ガイド
RF Product Selection Guide
PDF 2.24 MB
製品変更通知
PCN# : 220019 Add Alternate Assembly Locations on VFQFPN and FCLGA Packages
PDF 771 KB
製品概要
RF Switches Family
PDF 438 KB
製品変更通知
PCN#: TB1902-01 Add Alternate Test Location on Select Devices
PDF 359 KB
製品変更通知
PCN# : A1803-02 Correcting MSL level for Select Devices
PDF 170 KB
7件

設計・開発

F2932EVBI Evaluation Board for F2932 RF Switch - perspective

F2932EVBI

Evaluation
詳しくはこちら

Evaluation Board for High Reliability SPDT Absorptive RF Switch

The F2932EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F2932 RF switch. 

“Thru” calibration connectors are conveniently...

主要ドキュメント:
F2932 Datasheet REV1

ECADモデル

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ECADモデルを調べる
Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Lead Count (#)
    Temp. Grade
    Pb (Lead) Free
    Function
    Carrier Type
    Moisture Sensitivity Level (MSL)
    Price (USD) | 1ku
    ご購入 / サンプル
    型名
    F2932NBGP
    circleアクティブ
    memory
    view_in_ar
    サンプル入手可能
    今すぐ購入する
    		VFQFPN 16 P Yes Switch Tray 1 サンプルを入手,
    F2932NBGP8
    circleアクティブ
    memory
    view_in_ar
    		VFQFPN 16 P Yes Switch Reel 1 2.335
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    ビデオ&トレーニング

    F2932 / F2933 High-isolation SPDT RF Switches

    Operating at 50 to 8000 MHz, the F2932 and F2933 are silicon-based, low-distortion 50-ohm single-pole, double-throw (SPDT) RF switches. The devices offer one of the industry’s highest isolation values combined with low distortion and low insertion loss.

    With industry-standard 4x4mm 16-pin QFN packages and drop-in compatible footprints and control, their rich combination of specs make the devices ideal for communications and public safety systems, radar and general purpose switching.

    F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.

    For more information about IDT's leading RF portfolio, visit www.idt.com/go/RF.

    Video List
    F2932 / F2933 High-isolation SPDT RF Switches
    IDT RF Product Benefits Overview
    Zero-Distortion RF Technology by IDT
    Flat Noise RF Technology by IDT
    Glitch-Free RF Technology by IDT
    Constant Impedance Kz RF Technology by IDT
    Constant Linearity (KLIN) RF Technology by IDT

    ニュース＆ブログ

    IDT、低挿入損失を維持しながら業界トップクラスの アイソレーションとパワー処理を実現する広帯域RFスイッチを発表 ニュース 2016年5月25日