Evaluation Board for High Reliability SPDT Absorptive RF Switch
The F2933EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F2933 RF switch.
“Thru” calibration connectors are conveniently...
The F2933 is a high-reliability, low-insertion loss, 50Ω single-pole double-throw (SP2T) absorptive RF switch designed for a wide range of markets and applications. This device covers a broad frequency range from 50MHz to 8000MHz, has an operating temperature range of -40 °C to 105 °C, and a wide supply voltage range of 2.7V to 5.5V. Designed for high-power handling, the F2933 has a P1 dB as high as 36.5dBm, supporting a peak operating power of 34dBm in the through path and a hot switching power of 27dBm into the terminated RF port. In addition to providing low-insertion loss, the F2933 also delivers high isolation and low distortion performance while providing a 50Ω termination to the unused RF ports.
The F2933 uses a single positive supply voltage supporting three logic control pins using either 3.3V or 1.8V control logic.
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分類 | タイトル | 日時 |
データシート | PDF 3.99 MB | |
ガイド | PDF 2.24 MB | |
製品概要 | PDF 438 KB | |
製品変更通知 | PDF 170 KB | |
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The F2933EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F2933 RF switch.
“Thru” calibration connectors are conveniently...
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Operating at 50 to 8000 MHz, the F2932 and F2933 are silicon-based, low-distortion 50-ohm single-pole, double-throw (SPDT) RF switches. The devices offer one of the industry’s highest isolation values combined with low distortion and low insertion loss.
With industry-standard 4x4mm 16-pin QFN packages and drop-in compatible footprints and control, their rich combination of specs make the devices ideal for communications and public safety systems, radar and general purpose switching.
F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.
For more information about IDT's leading RF portfolio, visit www.idt.com/go/RF.
IDT、低挿入損失を維持しながら業界トップクラスの アイソレーションとパワー処理を実現する広帯域RFスイッチを発表 | ニュース | 2016年5月25日 |