概要

The ISL73033SLHM is a radiation hardened 100V Gallium Nitride (GaN) FET with an integrated low-side GaN FET driver. The GaN FET are capable of providing up to 45A output and have an RDSON as low as 7.5mΩ. The integrated low-side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of the supply voltage. The ISL73033SLHM has a propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55 °C to +125 °C and receives screening similar to QMLV devices. The device is offered in an 81-lead Ball Grid Array (BGA) plastic package.

ISL73033SLHM - Typical Application
ISL73033SLHM - Block Diagram
ISL73033SLHM - Pin Assignment
ISL73033SLHM - Typical Application
ISL73033SLHM - Block Diagram
ISL73033SLHM - Pin Assignment
  • Production testing and qualification follow AS6294/1
  • 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
  • Wide driver bias range of 4.5V to 13.2V
  • Up to 16.5V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Integrated driver optimized for enhancement-mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
  • Full military temperature range operation
    • TA = -55 °C to +125 °C
    • TJ = -55 °C to +150 °C
  • Radiation hardness assurance (lot-by-lot)
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness for Driver (see the SEE test report)
    • No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg
    • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • SEE hardness for GaN FET (see the SEE test report)
    • No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート
ISL73033SLHM Datasheet
PDF 467 KB
カタログ
Intersil Space Products Brochure
PDF 5.02 MB
技術概要
R34ZZ0006: Radiation Hardened Plastic Production and QCI Flow
PDF 229 KB
レポート
ISL73033SLHM Total Dose Test Report
PDF 1.31 MB
レポート
ISL73033SLHM SEE Test Report
PDF 484 KB
ホワイトペーパー
急拡大する小型衛星市場「New Space」におけるGaNデバイスの活用
PDF 1.49 MB 英語
ホワイトペーパー
Advantages of Using Gallium NitrideFETs in Satellite Applications
PDF 548 KB
ホワイトペーパー
Wafer by Wafer Low Dose Rate Acceptance White Paper
PDF 533 KB
アプリケーションノート
AN9867: End of Life Derating: A Necessity or Overkill
PDF 338 KB
9件

設計・開発

ISL73033SLHEV1Z Evaluation Board

ISL73033SLHEV1Z

Evaluation
詳しくはこちら

100V GaN FET評価ボード付き耐放射線特性ドライバGaNパワーステージ

ISL73033SLHEV1Z評価ボードはISL73033SLH 耐放射線ドライバGaNパワーステージの性能を評価するために用いられます。 ISL73033SLHは4.5Vゲートドライバと100V、7.5mΩエンハンスメントモードの窒化ガリウムFET（eGaN FET）を8mm x 8mmの単一BGAパッケージに統合されています。...

主要ドキュメント:
ISL73033SLHEV1Z User Manual

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製品選択

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    Moisture Sensitivity Level (MSL)
    ご購入 / サンプル
    型名
    ISL73033SLHMKZ
    circleアクティブ
    memory
    spa
    view_in_ar
    		FBGA Tray 25 3
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