耐放射線性ローサイドGaN FETドライバ評価ボード
ISL71040MEV1Z評価プラットフォームは、ISL71040M評価用に設計されています。ISL71040MローサイドGaN FETドライバは、絶縁トポロジおよび昇圧タイプ構成で、エンハンスモードのガリウム窒化（GaN）FETを動作させるように設計されています。これは4.5V～13.2Vで動作し...
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概要
説明
The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.
特長
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- NiPdAu-Ag Lead finish (Sn-free, Pb-free)
- Moisture Sensitivity Level (MSL) Rating: 1
- Passes NASA Low Outgassing Specifications
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Characterized radiation levels
- Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
- No SEB/L, VDD = 16.5V : 43MeV•cm2/mg
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| 分類 | タイトル | 日時 |
| データシート | PDF 782 KB | |
| 技術概要 | PDF 356 KB | |
| カタログ | PDF 5.02 MB | |
| Product Advisory | PDF 414 KB | |
| レポート | PDF 316 KB | |
| ホワイトペーパー | PDF 1.49 MB 英語 | |
| ホワイトペーパー | PDF 548 KB | |
| アプリケーションノート | PDF 338 KB | |
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