Gallium Nitride (GaN) Power Discretes

Our GaN power discretes offer improved efficiency over silicon through lower gate charge, lower crossover loss and smaller reverse recovery charge. Leading the GaN Revolution, Renesas has the highest performance, highest reliability GaN devices for high voltage power conversion applications. We have the industry's only JEDEC- and AEC-Q101-qualified GaN FETs and can achieve over 99% efficiency, 40% more power density and 20% lower system cost.