ISL71441M GaN FET Half-Bridge Driver Evaluation Board
The ISL71441MEV1Z evaluation board features the ISL71441M 12V GaN FET half-bridge driver.
The ISL71441M is a radiation tolerant PWM input 12V half-bridge GaN FET...
概要
説明
The ISL71441M is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive current provide a compact and robust GaN FET half-bridge driver.
The ISL71441M is designed to interface directly to the ISL73847M dual-phase PWM buck controller to create a high-efficiency Point-of-Load (POL) regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.
The ISL7144M is offered in a 20 Ld 5mm x 5mm Quad Flat No Lead (QFN) plastic package. It is specified to operate across an ambient temperature range of -55 °C to +125 °C.
特長
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs for independent gate turn-on and turn-off control
- High-side peak driver current: 5A
- Low-side peak driver current: 10A
- Separate high-side and low-side programmable dead time control
- Fast propagation delay with low mismatch
- Full military temperature operation -55 °C to +125 °C ambient range
- 20 Ld Plastic 5mm x 5mm QFN Package
製品比較
アプリケーション
アプリケーション
- High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
- 12V to 1V POL regulation
- GaN FET motor driver
ドキュメント
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| 分類 | タイトル | 日時 |
| データシート | PDF 2.38 MB | |
| 技術概要 | PDF 356 KB | |
| カタログ | PDF 5.02 MB | |
| アプリケーションノート | PDF 1.13 MB | |
4件
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設計・開発
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Processing table
| QFN | Tray | 25 | 1 | サンプルを入手, | |
| QFN | Reel | 2500 | 1 |
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ビデオ&トレーニング
ニュース＆ブログ
| ニュース | 2023年7月19日 |
